Product Summary

The 2SB1132T100R is a Medium Power Transistor.

Parametrics

2SB1132T100R absolute maximum ratings: (1)collector-base voltage: -40 V; (2)collector-emitter voltage: -32 V; (3)emitter-base voltage: -5 V; (4)collector current: -1 A (DC), -2 A (Pulse); (5)collector power dissipation: 0.5 W; (6)junction temperature: 150 ℃; (7)storage temperature: -55 to +150 ℃.

Features

2SB1132T100R features: (1)Low VCE(sat) = -0.2V (Typ.) (IC/IB = -500mA/-50mA); (2)Compliments 2SD1664/2SD1858.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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2SB1132T100R
2SB1132T100R

ROHM Semiconductor

Transistors Bipolar (BJT) PNP 32V 1A

Data Sheet

0-1: $0.30
1-25: $0.23
25-100: $0.17
100-500: $0.09
500-1000: $0.08
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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2SB1000
2SB1000

Other


Data Sheet

Negotiable 
2SB1000A
2SB1000A

Other


Data Sheet

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2SB1001
2SB1001

Other


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2SB1002
2SB1002

Other


Data Sheet

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2SB1005
2SB1005

Other


Data Sheet

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2SB1007
2SB1007

Other


Data Sheet

Negotiable