(China (Mainland))
Product Summary
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs of the IRF1405PBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this IRF1405PBF power MOSFET are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1405PBF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRF1405PBF maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V 169A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V 118A; (3)IDM Pulsed Drain Current 680A; (4)PD @TC = 25℃ Power Dissipation 330 W; (5)Linear Derating Factor 2.2 W/℃; (6)VGS Gate-to-Source Voltage ± 20 V; (7)EAS Single Pulse Avalanche Energy 560 mJ; (8)Soldering Temperature, for 10 seconds 300 (1.6mm from case )℃; (9)Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1N.m).
Features
IRF1405PBF features: (1)Electric Power Steering (EPS); (2)Anti-lock Braking System (ABS); (3)Wiper Control; (4)Climate Control; (5)Power Door; (6)Lead-Free.
Diagrams
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 IRF1405PBF |
International Rectifier |
MOSFET MOSFT 55V 133A 5.3mOhm 170nC |
Data Sheet |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
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IRF1010EL |
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MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
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IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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